Гетероструктуры AlGaAs/InGaAs/GaAs для ключевых pHEMT-транзисторов

The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided δ-doping at 6×1012 cm-2 and an AlAs/GaAs spacer. Such were used fabricate monolithic integrated circuits single-pole double throw switches with gate length width 0.5 μm 100 μm, respectively. resulting had following parameters: gm = 400 mS/mm, saturation current ID=380 mA/mm, ON-state resistance 1.0 Ω×mm, OFF-state capacitance 0.37 pF/mm. switch 20 GHz are: insertion loss -2.2 dB, isolation -56 return -11.7 linearity P1dB 21 dBm IIP3 40 dBm.